| PART |
Description |
Maker |
| FDD86326 |
N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm
|
Fairchild Semiconductor
|
| FDMC008N08C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| ACSL-6300 ACSL-6420 ACSL-6420-56R ACSL-6420-56T AC |
4 CHANNEL LOGIC OUTPUT OPTOCOUPLER
ECONOLINE: RBM - New Micro Size SIP 6 Package- Industry Standard Pinout- 3kVDC Isolation- UL94V-0 Package Material- Efficiency to 85% 多通道和双向，15 MBd的数字逻辑门光电耦合
(ACSL6xx0) Multi-Channel and Bi-Directional / 15 MBd Digital Logic Gate Optocoupler
(ACSL-6xx0) Multi-Channel and Bi-Directional / 15 MBd Digital Logic Gate Optocoupler
ACSL-6210-00R · Multi-Channel and Bi-Directional, 15 MBd Digital Logic Gate Optocoupler
ACSL-6400-00T · Multi-Channel and Bi-Directional, 15 MBd Digital Logic Gate Optocoupler
|
AGILENT TECHNOLOGIES INC
Glenair, Inc.
TE Connectivity, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| 165-05A06S 164-04A06 165-04A06S |
NOT RoHS. RF inductor, tunable, aluminum core, shielded (add 'L' for compliant version) SHIELDED, 0.043 uH - 0.05 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.052 uH - 0.077 uH, VARIABLE INDUCTOR
SHIELDED, 0.035 uH - 0.041 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc.
COILCRAFT INC
|
